Parreira, P. , Lavareda, G., Valente, J. , Nunes, F.T., Amaral, A. and Nunes de Carvalho, C. (2010) Undoped InOx films deposited by radio frequency plasma enhanced reactive thermal evaporation at room temperature: importance of substrate. Journal of Nanoscience and Nanotechnology, 10(4), pp. 2701-2704. (doi: 10.1166/jnn.2010.1431) (PMID:20355487)
Full text not currently available from Enlighten.
Abstract
Conductive and transparent undoped thin films of indium oxide (InOx ), 120 nm average thick, were deposited by radio frequency plasma enhanced reactive thermal evaporation (rf-PERTE) of indium in the presence of oxygen at room temperature. Several substrates were used in order to study their influence on the main properties of these films: alkali free (AF) glass, fused silica, crystalline silicon and polyethylene terephthalate (PET). Surface morphology of the InOx films as a function of the substrates was observed by SEM and showed that the undoped InOx films obtained are nanostructured. For the c-Si substrate, InOx films with increased grain size are obtained, induced by the crystalline substrate. Films deposited on fused silica and AF glass substrates show a nano-grainy surface with similar surface morphologies. The InOx films deposited on AF glass show the highest values of both: electrical conductivity of about 1100 ( cm)−1 and visible transmittance of 85%. The substrate has a greater influence on the surface morphology of the films when a polymer (PET) is used. InOx films deposited on PET show a decrease in the electrical conductivity (90 ( cm)−1) and a slight decrease in the average visible transmittance (78%).
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Valente, Dr Joao and Parreira, Dr Pedro Miguel |
| Authors: | Parreira, P., Lavareda, G., Valente, J., Nunes, F.T., Amaral, A., and Nunes de Carvalho, C. |
| College/School: | College of Science and Engineering > School of Physics and Astronomy College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Nanoscience and Nanotechnology |
| Publisher: | American Scientific Publishers |
| ISSN: | 1533-4880 |
| ISSN (Online): | 1533-4899 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric