Optoelectronic properties of transparent p-type semiconductor CuxS thin films

Parreira, P. , Lavareda, G., Valente, J. , Nunes, F.T., Amaral, A. and Nunes de Carvalho, C. (2010) Optoelectronic properties of transparent p-type semiconductor CuxS thin films. Physica Status Solidi A: Applications and Materials Science, 207(7), pp. 1652-1654. (doi:10.1002/pssa.200983731)

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Abstract

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu2S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work CuxS thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our CuxS thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved.

Item Type:Articles
Additional Information:This work was supported by project PTDC/EEA-ELC/74334/2006.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Valente, Dr Joao and Parreira, Dr Pedro Miguel
Authors: Parreira, P., Lavareda, G., Valente, J., Nunes, F.T., Amaral, A., and Nunes de Carvalho, C.
College/School:College of Science and Engineering > School of Physics and Astronomy
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Physica Status Solidi A: Applications and Materials Science
Publisher:Wiley
ISSN:1862-6300
ISSN (Online):1862-6319
Published Online:12 July 2010

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