Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials

Sobhani, S.A., Childs, D.T., Babazadeh, N., Stevens, B.J., Nishi, K., Sugawara, M., Takemasa, K. and Hogg, R.A. (2016) Study of electro-absorption effects in 1300nm In(Ga)As/GaAs quantum dot materials. In: Physics and Simulation of Optoelectronic Devices XXIV, San Francisco, California, USA, 15-18 Feb 2016, 97420S1. ISBN 9781628419771 (doi:10.1117/12.2213187)

[img]
Preview
Text
128488.pdf - Published Version

492kB

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Babazadeh, Dr Nasser and Hogg, Professor Richard and Childs, Dr David
Authors: Sobhani, S.A., Childs, D.T., Babazadeh, N., Stevens, B.J., Nishi, K., Sugawara, M., Takemasa, K., and Hogg, R.A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:0277-786X
ISBN:9781628419771
Copyright Holders:Copyright © 2016 SPIE
First Published:First published in Proceedings of SPIE 9742: 97420S-1
Publisher Policy:Reproduced in accordance with the publisher copyright policy

University Staff: Request a correction | Enlighten Editors: Update this record