An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition

Myronov, M., Morrison, C., Halpin, J., Rhead, S., Casteleiro, C., Foronda, J., Shah, V. A. and Leadley, D. (2014) An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition. Japanese Journal of Applied Physics, 53(4S), 04EH02. (doi: 10.7567/JJAP.53.04EH02)

Abstract

An extremely high room temperature two-dimensional hole gas (2DHG) drift mobility of 4230 cm2 V−1 s−1 in a compressively strained Ge quantum well (QW) heterostructure grown by an industrial type RP-CVD technique on a Si(001) substrate is reported. The low-temperature Hall mobility and carrier density of this structure, measured at 333 mK, are 777000 cm2 V−1 s−1 and 1.9 × 1011 cm−2, respectively. These hole mobilities are the highest not only among the group-IV Si based semiconductors, but also among p-type III–V and II–VI ones. The obtained room temperature mobility is substantially higher than those reported so far for the Ge QW heterostructures and reveals a huge potential for further application of strained Ge QW in a wide variety of electronic and spintronic devices.

• Item Type: Articles
• Additional Information: This work was supported by the EPSRC funded “Spintronic device physics in Si/Ge Heterostructures” EP/J003263/1 and “Platform Grant” EP/J001074/1 projects.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Halpin, Dr John
• Authors: Myronov, M., Morrison, C., Halpin, J., Rhead, S., Casteleiro, C., Foronda, J., Shah, V. A., and Leadley, D.
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Japanese Journal of Applied Physics
• Publisher: IOP Publishing
• ISSN: 0021-4922
• ISSN (Online): 1347-4065
• Published Online: 06 February 2014