Electrical properties and strain distribution of Ge suspended structures

Shah, V.A. et al. (2015) Electrical properties and strain distribution of Ge suspended structures. Solid-State Electronics, 108, pp. 13-18. (doi: 10.1016/j.sse.2014.12.004)

Abstract

Germanium membranes and microstructures of 50–1000 nm thickness have been fabricated by a combination of epitaxial growth on a Si substrate and simple etching processes. The strain in these structures has been measured by high-resolution micro-X-ray diffraction and micro-Raman spectroscopy. The strain in these membranes is extremely isotropic and the surface is observed to be very smooth, with an RMS roughness below 2 nm. The process of membrane fabrication also serves to remove the misfit dislocation network that originally forms at the Si/Ge interface, with benefits for the mechanical, optical and electrical properties of the crystalline membranes.

• Item Type: Articles
• Additional Information: This work was supported by the EPSRC, Projects. EP/F040784/1, and EP/J001074/1; ERC grant #202735, ‘‘NonContactUltrasonic’’; NANOFUNCTION Network of Excellence, funded by the European Commission 7th Framework Programme (ICT-FP7, #228464).
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Halpin, Dr John
• Authors: Shah, V.A., Rhead, S.D., Finch, J., Myronov, M., Reparaz, J.S., Morris, R.J., Wilson, N.R., Kachkanov, V., Dolbnya, I.P., Halpin, J.E., Patchett, D., Allred, P., Colston, G., Sawhney, K.J.S., Sotomayor Torres, C.M., and Leadley, D.R.
• College/School: College of Science and Engineering > School of Physics and Astronomy
• Journal Name: Solid-State Electronics
• Publisher: Elsevier
• ISSN: 0038-1101
• Published Online: 31 January 2015