Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer

Cho, S.-J., Li, X. , Floros, K., Hamakumara, D., Ignatova, O. , Moran, D. , Humphreys, C.J. and Thayne, I. (2016) Low off-state Leakage Currents in AlGaN/GaN High Electron Mobility Transistors By Employing A Highly Stressed SiNx Surface Passivation Layer. 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016.

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Abstract

In this study, the impact of the stress in SiNx surface passivation layers on off-state drain and gate leakage currents and off-state breakdown voltage in AlGaN/GaN High Electron Mobility Transistors (HEMTs) is assessed. The SiNx films were deposited at room temperature by inductively coupled plasma chemical vapour deposition (ICP-CVD). Compared to unpassivated devices, the off-state drain and gate leakage currents of AlGaN/GaN HEMTs is increased by up to 2 orders of magnitude for a 200 nm thick SiNx passivation layer with 309 MPa compressive stress. The use of a bilayer SiNx passivation scheme comprising 70 nm SiNx with 309 MPa compressive stress followed by 130 nm SiNx with 880 MPa compressive stress resulted in off-state drain and gate leakage currents reduced by up to 1 order of magnitude when compared to unpassivated devices.

Item Type:Conference or Workshop Item
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Moran, Dr David and Li, Dr Xu and Cho, Dr Sung-Jin and Ignatova, Dr Olesya
Authors: Cho, S.-J., Li, X., Floros, K., Hamakumara, D., Ignatova, O., Moran, D., Humphreys, C.J., and Thayne, I.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2016 American Vacuum Society
First Published:First published in 19th Workshop on Dielectrics in Microelectronics (WoDIM) 2016
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
600761Silicon Compatible GaN Power ElectronicsIain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/K014471/1ENG - ENGINEERING ELECTRONICS & NANO ENG

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