Physical Simulation of Si-Based Resistive Random-Access Memory Devices

Sadi, T., Wang, L., Gerrer, L. and Asenov, A. (2015) Physical Simulation of Si-Based Resistive Random-Access Memory Devices. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington, DC, USA, 9-11 Sep 2015, pp. 385-388. ISBN 9781467378581 (doi: 10.1109/SISPAD.2015.7292340)

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Abstract

We present a newly-developed three-dimensional (3D) physical simulator suitable for the study of resistive random-access memory (RRAM) devices. We explore the switching behavior of Si-rich silica (SiOx) RRAM structures, whose operation has been successfully demonstrated experimentally at ambient conditions [1]. The simulator couples self-consistently a simulation of oxygen ion and electron transport to a self-heating model and the `atomistic' simulator GARAND. The electro-thermal simulation model provides many advantages compared to the classical phenomenological models based on the resistor breaker network. The simulator is validated with respect to experimental data and captures successfully the memristive behavior of the simulated SiOx RRAMs, by reconstructing the conductive filament formation and destruction phenomena in the 3D space. The simulation framework is useful for exploring the little-known physics of SiOx RRAMs, and providing efficient designs, in terms of performance, variability and reliability, for both memory devices and circuits.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Gerrer, Dr Louis and Asenov, Professor Asen and Wang, Dr Liping and Sadi, Dr Toufik
Authors: Sadi, T., Wang, L., Gerrer, L., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:1946-1569
ISBN:9781467378581
Copyright Holders:Copyright © 2015 IEEE
First Published:First published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD): 385-388
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
612281Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxidesAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/K016776/1ENG - ENGINEERING ELECTRONICS & NANO ENG