Hot Carrier Aging and its Variation Under Use-Bias: Kinetics, Prediction, Impact on Vdd and SRAM

Duan, M. et al. (2015) Hot Carrier Aging and its Variation Under Use-Bias: Kinetics, Prediction, Impact on Vdd and SRAM. In: 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 7-9 Dec 2015, 20.4.1-20.4.4. ISBN 9781467398947 (doi: 10.1109/IEDM.2015.7409742)

Abstract

As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial Source-Measure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Gerrer, Dr Louis and Duan, Dr Meng
• Authors: Duan, M., Zhang, J. F., Manut, A., Ji, Z., Zhang, W., Asenov, A., Gerrer, L., Reid, D., Razaidi, H., Vigar, D., Chandra, V., Aitken, R., Kaczer, B., and Groeseneken, G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 2156-017X
• ISBN: 9781467398947

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