Modeling of radiation hardness of a CCD with high-speed column parallel readout

Sopczak, A. et al. (2009) Modeling of radiation hardness of a CCD with high-speed column parallel readout. Nuclear Physics, Section B, Proceedings Supplements, 197(1), pp. 349-352. (doi: 10.1016/j.nuclphysbps.2009.10.101)

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Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. Radiation hardness is an important aspect in the CCD development. Bulk radiation damage in the silicon leads to electron traps and hence to charge transfer inefficiency (CTI). The effects of the two trap levels 0.17 and 0.44 eV are considered. We have extended our Analytic Model to include the effects of the shape of the signal charge packet and the clock voltage on the CTI determination. The CTI values determined with the Analytic Model largely agree with those from a full TCAD simulation.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Maneuski, Dr Dima and Buttar, Professor Craig
Authors: Sopczak, A., Aoulmit, S., Bekhouche, K., Bowdery, C., Buttar, C., Damerell, C., Djendaoui, D., Dehimi, L., Greenshaw, T., Koziel, M., Maneuski, D., Nomerotski, A., Stefanov, K., Tikkanen, T., Woolliscroft, T., and Worm, S.
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Nuclear Physics, Section B, Proceedings Supplements
Publisher:Elsevier BV
ISSN (Online):1873-3832
Published Online:21 February 2010

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