GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications

Eblabla, A., Li, X. , Wallis, D. J., Guiney, I. and Elgaid, K. (2016) GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications. In: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell. UK, 12-13 Sept 2016,

Abstract

This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance. Enhancement in short circuit current gain (fT) and maximum frequency of oscillation (fMAX) was observed in the HEMT with a 1 nm AlN spacer, where (fT) and (fMAX) were increased from 47 GHz to 55 GHz and 79 GHz to 121 GHz, respectively. Small-signal-modelling analysis was carried out to study this improvement in performance. We found that the AlN interlayer played a crucial role in reducing the gate-source capacitance, Cgs, by 36 % and delay, τ, by 20 % under the gate, as a result of an increase in mobility and a reduction in trap-related effects.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Dr Xu and Elgaid, Dr Khaled
• Authors: Eblabla, A., Li, X., Wallis, D. J., Guiney, I., and Elgaid, K.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Copyright Holders: Copyright © 2016 The Authors
• Publisher Policy: Reproduced with the permission of the authors.

Related URLs

• Organisation