Self-consistent physical modeling of SiOx-based RRAM structures

Sadi, T., Wang, L., Gerrer, L., Georgiev, V. and Asenov, A. (2015) Self-consistent physical modeling of SiOx-based RRAM structures. In: International Workshop on Computational Electronics (IWCE), West Lafayette, IN, USA, 2-4 Sep 2015, pp. 1-4. ISBN 978069251523515 (doi:10.1109/IWCE.2015.7301981)

123047.pdf - Accepted Version



We apply a unique three-dimensional (3D) physics-based atomistic simulator to study silicon-rich (SiOx, x<;2) resistive switching nonvolatile memory (RRAM) devices. We couple self-consistently a simulation of ion and electron transport to the `atomistic' simulator GARAND and a self-heating model to explore the switching processes in these structures. The simulation model is more advanced than other available phenomenological models based on the resistor breaker network. The simulator is calibrated with experimental data, and reconstructs accurately the formation and rupture of the conductive filament in the 3D space. We demonstrate how the simulator is useful for exploring the little-known physics of these promising devices, and show that switching is an intrinsic property of the SiOx layer. In general, the simulation framework is useful for providing efficient designs, in terms of performance, variability and reliability, for memory devices and circuits. The simulator validity is not limited to SiOx-based devices, and can be used to study other promising RRAM systems based, e.g., on transition metal oxides.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Gerrer, Dr Louis and Asenov, Professor Asen and Wang, Dr Liping and Georgiev, Dr Vihar and Sadi, Dr Toufik
Authors: Sadi, T., Wang, L., Gerrer, L., Georgiev, V., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2015 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
612281Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxidesAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)EP/K016776/1ENG - ENGINEERING ELECTRONICS & NANO ENG