Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X. , Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

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Abstract

This work presents, to the best of the authors knowledge, the first experimental findings on the impact of in situ H<sub>2</sub> plasma exposure to the electrical properties of the interface between p-type Ga<sub>0.7</sub>In<sub>0.3</sub>Sb and atomic layer deposited Al<sub>2</sub>O<sub>3</sub>. The effects of trimethyl aluminium (TMA) exposure prior to Al<sub>2</sub>O<sub>3</sub> deposition, and of a post gate metal forming gas anneal (FGA) are also investigated. The control sample, which was subjected to an ex situ HCl clean prior to ALD only, demonstrated a capacitance modulation of 36.29 % before FGA. This degraded for samples exposed to the H<sub>2</sub> plasma for all plasma powers investigated. TMA exposure offered no improvement, and significantly increased the frequency dispersion in accumulation for all samples. A post gate metal FGA at 350 °C for 15 minutes was found to substantially improve the interface quality, with the capacitance modulation, frequency dispersion in accumulation and dC/dV improving by as much as 190 %, 91 %, and 170 % respectively.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fu, Mr Yen-Chun and Steer, Dr Matthew and Li, Dr Xu and Thayne, Professor Iain and Millar, Mr David and Peralagu, Mr Uthayasankaran
Authors: Millar, D., Peralagu, U., Fu, Y.-C., Li, X., Steer, M., and Thayne, I.
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2016 American Vacuum Society
First Published:First published in 19th Workshop on Dielectrics in Microelectronics (WoDIM) 2016
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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