Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3

Millar, D., Peralagu, U. , Fu, Y.-C., Li, X., Steer, M. and Thayne, I. (2016) Initial Investigation on the Impact of In Situ Hydrogen Plasma Exposure to the Interface Between Molecular Beam Epitaxially Grown P-Ga0.7In0.3Sb (100) and Thermal Atomic Layer Deposited (ALD) Al2O3. In: 19th Workshop on Dielectrics in Microelectronics (WoDIM), Aci Castello, Catania, Italy, 27-30 Jun 2016,

[img]
Preview
Text
121595.pdf - Accepted Version

871kB

Publisher's URL: http://wodim2016.imm.cnr.it/index.asp?cont=program

Abstract

This work presents, to the best of the authors knowledge, the first experimental findings on the impact of in situ H2 plasma exposure to the electrical properties of the interface between p-type Ga0.7In0.3Sb and atomic layer deposited Al2O3. The effects of trimethyl aluminium (TMA) exposure prior to Al2O3 deposition, and of a post gate metal forming gas anneal (FGA) are also investigated. The control sample, which was subjected to an ex situ HCl clean prior to ALD only, demonstrated a capacitance modulation of 36.29 % before FGA. This degraded for samples exposed to the H2 plasma for all plasma powers investigated. TMA exposure offered no improvement, and significantly increased the frequency dispersion in accumulation for all samples. A post gate metal FGA at 350 °C for 15 minutes was found to substantially improve the interface quality, with the capacitance modulation, frequency dispersion in accumulation and dC/dV improving by as much as 190 %, 91 %, and 170 % respectively.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Fu, Mr Yen-Chun and Steer, Dr Matthew and Li, Dr Xu and Millar, Mr David and Thayne, Professor Iain and Peralagu, Mr Uthayasankaran
Authors: Millar, D., Peralagu, U., Fu, Y.-C., Li, X., Steer, M., and Thayne, I.
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2016 American Vacuum Society
First Published:First published in 19th Workshop on Dielectrics in Microelectronics (WoDIM) 2016
Publisher Policy:Reproduced in accordance with the publisher copyright policy

University Staff: Request a correction | Enlighten Editors: Update this record