GaAs-based Self-Aligned Stripe Superluminescent Diodes Processed Normal to the Cleaved Facet

Ghazal, O. M. S., Lei, D., Childs, D. T. , Stevens, B. J., Babazadeh, N., Hogg, R.A. and Groom, K. M. (2016) GaAs-based Self-Aligned Stripe Superluminescent Diodes Processed Normal to the Cleaved Facet. In: Novel In-Plane Semiconductor Lasers XV, San Francisco, CA, USA, 15-18 Feb 2016, p. 976706. (doi: 10.1117/12.2211062)

Abstract

We demonstrate GaAs-based superluminescent diodes (SLDs) incorporating a window-like back facet in a self-aligned stripe. SLDs are realised with low spectral modulation depth (SMD) at high power spectral density, without application of anti-reflection coatings. Such application of a window-like facet reduces effective facet reflectivity in a broadband manner. We demonstrate 30mW output power in a narrow bandwidth with only 5% SMD, outline the design criteria for high power and low SMD, and describe the deviation from a linear dependence of SMD on output power as a result of Joule heating in SLDs under continuous wave current injection. Furthermore, SLDs processed normal to the facet demonstrate output powers as high as 20mW, offering improvements in beam quality, ease of packaging and use of real estate. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Childs, Dr David and Hogg, Professor Richard and Babazadeh, Dr Nasser
• Authors: Ghazal, O. M. S., Lei, D., Childs, D. T., Stevens, B. J., Babazadeh, N., Hogg, R.A., and Groom, K. M.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 0277-786X
• Copyright Holders: Copyright © 2016 SPIE
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher