Interfacial reactions in a HfO2/TiN/poly-Si gate stack

MacKenzie, M., Craven, A.J., McComb, D.W. and De Gendt, S. (2006) Interfacial reactions in a HfO2/TiN/poly-Si gate stack. Applied Physics Letters, 88, (doi: 10.1063/1.2201891)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:McComb, Dr David and Craven, Professor Alan
Authors: MacKenzie, M., Craven, A.J., McComb, D.W., and De Gendt, S.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Physics and Astronomy
Journal Name:Applied Physics Letters
ISSN:0003-6951

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
350671Chemistry, structure and bonding in high-k gate oxide stacksAlan CravenEngineering & Physical Sciences Research Council (EPSRC)GR/S44280/01Physics and Astronomy