Nanowire Transistor Solutions for 5NM and Beyond

Asenov, A. , Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T. and Georgiev, V.P. (2016) Nanowire Transistor Solutions for 5NM and Beyond. In: 2016 17th International Symposium on Quality Electronic Design (ISQED), Santa Clara, CA, USA, 15-16 Mar 2016, pp. 269-274. (doi: 10.1109/ISQED.2016.7479212)

Abstract

In this paper we present a comprehensive computational study of silicon nanowire transistor (SNT) and a SNM SRAM cell based on advanced design technology co-optimization (DTCO) TCAD tools. Utilizing this methodology, we provide guidelines and solutions for 5 nm and beyond in CMOS technology. At first, drift-diffusion (DD) results are fully calibrated against a Poisson-Schrodinger (PS) solution to calibrate density-gradient quantum corrections, and ensemble Monte Carlo (EMC) simulations to calibrate transport models. The calibrated DD gives us the capability to simulate statistical variability in nanowire transistors of the 5nm node and beyond accurately and efficiently. Various SNT structures are evaluated in terms of device figures of merit, and optimization of SNTs in terms of electrostatics driven performance is carried out. A variability-aware hierarchical compact model approach for SNT is adopted and used for statistical SRAM simulation near the "scaling limit". The scaling of SNTs beyond the 5 nm is also discussed.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Georgiev, Professor Vihar and Wang, Dr Xingsheng and Asenov, Professor Asen and Al-Ameri, Talib Mahmood Ali
• Authors: Asenov, A., Wang, Y., Cheng, B., Wang, X., Asenov, P., Al-Ameri, T., and Georgiev, V.P.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 1948-3295
• Copyright Holders: Copyright © 2016 IEEE
• First Published: First published in 2016 17th International Symposium on Quality Electronic Design (ISQED): 269-274
• Publisher Policy: Reproduced in accordance with the publisher copyright policy