Optimization of High Current Density Resonant Tunneling Diodes for Terahertz Emitters

Baba, R., Jacobs, K.J.P., Stevens, B.J., Hogg, R.A., Mukai, T. and Ohnishi, D. (2015) Optimization of High Current Density Resonant Tunneling Diodes for Terahertz Emitters. In: 8th UK-Europea-China Workshop on mm-waves and THz Technologies (UCMMT 2015), Cardiff, UK, 13-15 Sep 2015, ISBN 9781467374347 (doi:10.1109/UCMMT.2015.7460581)

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Abstract

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well.

Item Type:Conference Proceedings
Keywords:Resonant tunnelling diode, tunneling diode.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hogg, Professor Richard and Baba, Mr Razvan
Authors: Baba, R., Jacobs, K.J.P., Stevens, B.J., Hogg, R.A., Mukai, T., and Ohnishi, D.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Photonic Devices and Systems Group
ISBN:9781467374347
Copyright Holders:Copyright © 2015 IEEE
First Published:First published in 8th Millimeter Waves and THz Technology Workshop (UCMMT) 2015
Publisher Policy:Reproduced in accordance with the publisher copyright policy
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