Optimization of the Epitaxial Design of High Current Density Resonant Tunneling Diodes for Terahertz Emitters

Baba, R., Stevens, B. J., Mukai, T. and Hogg, R. A. (2016) Optimization of the Epitaxial Design of High Current Density Resonant Tunneling Diodes for Terahertz Emitters. In: SPIE Photonics West, San Francisco, CA, USA, 13-18 Feb 2016, 97552W. (doi:10.1117/12.2212346)

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Abstract

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hogg, Professor Richard and Baba, Mr Razvan
Authors: Baba, R., Stevens, B. J., Mukai, T., and Hogg, R. A.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Research Group:Photonic Devices and Systems Group
ISSN:0277-786X
Published Online:13 February 2016
Copyright Holders:Copyright © 2016 SPIE
First Published:First published in Proceedings of SPIE 9755: 97552W
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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