Characterisation of High Current Density Resonant Tunneling Diodes for THz Emission Using Photoluminescence Spectroscopy

Jacobs, K. J.P., Baba, R., Stevens, B. J., Mukai, T., Ohnishi, D. and Hogg, R. A. (2016) Characterisation of High Current Density Resonant Tunneling Diodes for THz Emission Using Photoluminescence Spectroscopy. In: SPIE Photonics West, San Francisco, CA, USA, 13-18 Feb 2016, (doi:10.1117/12.2212669)

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Abstract

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints.

Item Type:Conference Proceedings
Additional Information:K.J.P. Jacobs gratefully acknowledges EPSRC for a PhD studentship.
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hogg, Professor Richard and Baba, Mr Razvan
Authors: Jacobs, K. J.P., Baba, R., Stevens, B. J., Mukai, T., Ohnishi, D., and Hogg, R. A.
Subjects:Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:0277-786X
First Published:First published in Proceedings of SPIE 9758: 97580L
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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