GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures

Chen, S. et al. (2015) GaAs-based superluminescent light-emitting diodes with 290-nm emission bandwidth by using hybrid quantum well/quantum dot structures. Nanoscale Research Letters, 10(1), 340. (doi:10.1186/s11671-015-1049-2) (PMID:26303141) (PMCID:PMC4547973)

[img]
Preview
Text
118004.pdf - Published Version
Available under License Creative Commons Attribution.

2MB

Abstract

A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hogg, Professor Richard and Childs, Dr David and Li, Mr Wei
Authors: Chen, S., Li, W., Zhang, Z., Childs, D., Zhou, K., Orchard, J., Kennedy, K., Hugues, M., Clarke, E., Ross, I., Wada, O., and Hogg, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Nanoscale Research Letters
Publisher:Springer
ISSN:1931-7573
ISSN (Online):1556-276X
Copyright Holders:Copyright © 2016 Chen et al.
First Published:First published in Nanoscale Research Letters 10(1):340
Publisher Policy:Reproduced under a Creative Commons License

University Staff: Request a correction | Enlighten Editors: Update this record