Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics

Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G. , Guiney, I., Wallis, D. and Humphreys, C.J. (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108(7), 072901. (doi:10.1063/1.4942093)

Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G. , Guiney, I., Wallis, D. and Humphreys, C.J. (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108(7), 072901. (doi:10.1063/1.4942093)

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Abstract

We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Cho, Dr Sungjin and Thayne, Professor Iain
Authors: Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G., Guiney, I., Wallis, D., and Humphreys, C.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118
Published Online:16 February 2016
Copyright Holders:Copyright © 2016 The Authors
First Published:First published in Applied Physics Letters 108(7):072901
Publisher Policy:Reproduced under a Creative Commons License

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
600761Silicon Compatible GaN Power ElectronicsIain ThayneEngineering & Physical Sciences Research Council (EPSRC)EP/K014471/1ENG - ENGINEERING ELECTRONICS & NANO ENG