Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G. , Guiney, I., Wallis, D. and Humphreys, C.J. (2016) Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectrics. Applied Physics Letters, 108(7), 072901. (doi: 10.1063/1.4942093)
|
Text
117294.pdf - Published Version Available under License Creative Commons Attribution. 1MB |
Abstract
We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field effect transistors through the use of in-situ fluorine doping of atomic layer deposition Al2O3. Uniform distribution of F ions throughout the oxide thickness are achievable, with a doping level of up to 5.5 × 1019 cm−3 as quantified by secondary ion mass spectrometry. This fluorine doping level reduces capacitive hysteretic effects when exploited in GaN metal-oxide-semiconductor capacitors. The fluorine doping and forming gas anneal also induces an average positive threshold voltage shift of between 0.75 and 1.36 V in both enhancement mode and depletion mode GaN-based transistors compared with the undoped gate oxide via a reduction of positive fixed charge in the gate oxide from +4.67 × 1012 cm−2 to −6.60 × 1012 cm−2. The application of this process in GaN based power transistors advances the realisation of normally off, high power, high speed devices.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Cho, Dr Sung-Jin |
Authors: | Roberts, J.W., Chalker, P.R., Lee, K.B., Houston, P.A., Cho, S.-J., Thayne, I.G., Guiney, I., Wallis, D., and Humphreys, C.J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
Published Online: | 16 February 2016 |
Copyright Holders: | Copyright © 2016 The Authors |
First Published: | First published in Applied Physics Letters 108(7):072901 |
Publisher Policy: | Reproduced under a Creative Commons License |
University Staff: Request a correction | Enlighten Editors: Update this record