Gallacher, K. , Ballabio, A., Millar, R.W. , Frigerio, J., Bashir, A., MacLaren, I. , Isella, G., Ortolani, M. and Paul, D.J. (2016) Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates. Applied Physics Letters, 108(9), 091114. (doi: 10.1063/1.4943145)
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Abstract
Mid-infrared intersubband absorption from p-Ge quantum wells with Si0.5Ge0.5 barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.
| Item Type: | Articles |
|---|---|
| Additional Information: | Funding from the European Union Seventh Framework Programme (no: 613055) and UK EPSRC (no: EP/N003225/1) |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Paul, Professor Douglas and Millar, Dr Ross and MacLaren, Dr Ian and Bashir, Ms Aneeqa and Gallacher, Dr Kevin |
| Authors: | Gallacher, K., Ballabio, A., Millar, R.W., Frigerio, J., Bashir, A., MacLaren, I., Isella, G., Ortolani, M., and Paul, D.J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
| Copyright Holders: | Copyright © 2016 AIP Publishing LLC |
| First Published: | First published in Applied Physics Letters 108(9):091114 |
| Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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