Device Modelling of Bendable MOS Transistors

Heidari, H., Navaraj, W., Toldi, G. and Dahiya, R. (2016) Device Modelling of Bendable MOS Transistors. In: IEEE International Symposium on Circuits and Systems (ISCAS), Montreal, Canada, 22-25 May 2016, pp. 1358-1361. ISBN 9781479953417 (doi:10.1109/ISCAS.2016.7527501)

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Publisher's URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7527501&newsearch=true&queryText=Device%20Modelling%20of%20Bendable%20MOS%20Transistors

Abstract

This paper presents the directions for computer aided design, modelling and simulation of bendable MOSFET transistors towards futuristic bendable ICs. In order to compensate the bending stress a generalised geometry variation is discussed. Based on drain-current and threshold-voltage parameters varying under the bending stress, a Verilog-A compact model is proposed and describes I-V characteristics of a MOSFET in a standard 0.18-μm CMOS technology. This model has been compiled into Cadence environment to predict value and orientation of the bending stress. The proposed model validates against macro-model simulation results, and agrees for both the electron and hole conduction. It has been found that there is significant performance advantage in process-induced uniaxial stressed n-MOSFET, exhibiting a smaller drain-current variation and threshold voltage shift by monitoring the bending stress and changing the supply voltage.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dahiya, Dr Ravinder and Navaraj, Mr William and Heidari, Dr Hadi
Authors: Heidari, H., Navaraj, W., Toldi, G., and Dahiya, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9781479953417
Copyright Holders:Copyright © 2016 Institute of Electrical and Electronics Engineers
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
659051Flexible Electronics Device Modelling (FLEXELDEMO)Ravinder DahiyaEngineering & Physical Sciences Research Council (EPSRC)EP/M002519/1ENG - ENGINEERING ELECTRONICS & NANO ENG
663861Engineering Fellowships for Growth: Printed Tactile SKINRavinder DahiyaEngineering & Physical Sciences Research Council (EPSRC)EP/M002527/1ENG - ENGINEERING ELECTRONICS & NANO ENG