Inspection of Intrinsic Operation and DC Performance of 50nm Gate Length Hydrogen-Terminated Diamond Field Effect Transistors Using an Optimised Fabrication Process

Moran, D. A. J., Fox, O. J. L., McLelland, H., Russell, S. and May, P. W. (2011) Inspection of Intrinsic Operation and DC Performance of 50nm Gate Length Hydrogen-Terminated Diamond Field Effect Transistors Using an Optimised Fabrication Process. In: SBDD XVI Diamond Workshop, Hasselt, Belgium, Feb 2011,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Russell, Dr Stephen and McLelland, Mrs Helen
Authors: Moran, D. A. J., Fox, O. J. L., McLelland, H., Russell, S., and May, P. W.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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