Sub-100nm Gate-Length Hydrogenated Diamond FETs

Moran, D. A. J. , Porro, S., MacLaren, D. , Hill, R. J. and Wilson, J. I. B. (2009) Sub-100nm Gate-Length Hydrogenated Diamond FETs. In: UK Semiconductors 2009, Sheffield, UK, 1-2 July 2009,

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Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Hill, Mr Richard and Moran, Dr David and MacLaren, Dr Donald
Authors: Moran, D. A. J., Porro, S., MacLaren, D., Hill, R. J., and Wilson, J. I. B.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
College of Science and Engineering > School of Physics and Astronomy

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