High mobility III-V MOSFET Technology

Passlack, M. et al. (2007) High mobility III-V MOSFET Technology. In: CS MANTECH Conference, Austin, TX, USA, 14-17 May 2007,

Passlack, M. et al. (2007) High mobility III-V MOSFET Technology. In: CS MANTECH Conference, Austin, TX, USA, 14-17 May 2007,

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Publisher's URL: http://www.csmantech.org/Digests/2007/index2007.html

Abstract

1 µm GaAs enhancement-mode MOSFETs have been manufactured with a threshold voltage, maximum drain current, maximum transconductance, on-resistance, drain conductance, subthreshold swing, and gate current of 0.28 V, 397 mA/mm, 428 mS/mm, and 2.3 Ω mm, 10 mS/mm, 100 mV/dec, < 60 nA, respectively. An off-state breakdown voltage of 18 V was measured for an oxide thickness of 18 nm. An effective channel mobility of ≅ 5,500 cm2/Vs was measured on a 20 µm gate length device using the split C-V method. These devices are potentially suitable for RF power amplification, switching, and power control in mobile and wireless applications. The high MOSFET channel mobility is of interest for future CMOS applications.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Zhou, Dr Haiping and Thayne, Professor Iain and Thoms, Dr Stephen and Hill, Mr Richard and Moran, Dr David and Li, Dr Xu and Macintyre, Dr Douglas
Authors: Passlack, M., Droopad, R., Rajagopalan, K., Abrokwah, J., Zurcher, P., Hill, R., Moran, D., Li, X., Zhou, H., Macintyre, D., Thoms, S., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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