Enhancement Mode, Implant Free, Metal Gate, High-K Dielectric, III-V MOSFETs

Hill, R.J.W., Holland, M.C., Li, X. , Macintyre, D.S., Moran, D.A.J. , Stanley, C.R., Thoms, S. and Thayne, I.G. (2007) Enhancement Mode, Implant Free, Metal Gate, High-K Dielectric, III-V MOSFETs. In: 2007 8th European Workshop on Ultimate Integration of Silicon (ULIS), Leuven, Belgium, 15-16 Mar 2007, pp. 129-132.

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Abstract

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Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Li, Dr Xu and Thayne, Professor Iain and Macintyre, Dr Douglas and Thoms, Dr Stephen and Hill, Mr Richard and Stanley, Professor Colin and Moran, Dr David
Authors: Hill, R.J.W., Holland, M.C., Li, X., Macintyre, D.S., Moran, D.A.J., Stanley, C.R., Thoms, S., and Thayne, I.G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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