Characterisation and Inspection of 50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors

Moran, D. A. J. , MacLaren, D. A. , Porro, S., Hill, R., McLelland, H., John, P. and Wilson, J. I. B. (2010) Characterisation and Inspection of 50nm Gate-Length Hydrogen Terminated Diamond Field Effect Transistors. In: MRS Fall Meering, Boston MA, USA, 29 Nov - 3 Dec 2010,

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:McLelland, Mrs Helen and Hill, Mr Richard and Moran, Dr David and MacLaren, Dr Donald
Authors: Moran, D. A. J., MacLaren, D. A., Porro, S., Hill, R., McLelland, H., John, P., and Wilson, J. I. B.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record