120nm Gate Length E-Beam and Nanoimprint T-Gate GaAs pHEMTs Utilizing Non-Annealed Ohmic Contacts

Boyd, E., Moran, D. , McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S. , Stanley, C. R. and Thayne, I. G. (2002) 120nm Gate Length E-Beam and Nanoimprint T-Gate GaAs pHEMTs Utilizing Non-Annealed Ohmic Contacts. In: Compound Semiconductors 2002, Lausanne, Switzerland, 7-10 Oct 2002, ISBN 9780750309424

Full text not currently available from Enlighten.

Abstract

No abstract available.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Macintyre, Dr Douglas and McLelland, Mrs Helen and Thoms, Dr Stephen and Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled
Authors: Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thoms, S., Stanley, C. R., and Thayne, I. G.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:9780750309424

University Staff: Request a correction | Enlighten Editors: Update this record