Millimetre-wave Performance of InAlAs/InGaAs HEMTs Using a UVIII/PMMA Bilayer for 70nm T-Gate Fabrication

Edgar, D. L. et al. (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs Using a UVIII/PMMA Bilayer for 70nm T-Gate Fabrication. In: European Microwave Week 2002, Milan, Italy, 23-27 Sept 2002,

Edgar, D. L. et al. (2002) Millimetre-wave Performance of InAlAs/InGaAs HEMTs Using a UVIII/PMMA Bilayer for 70nm T-Gate Fabrication. In: European Microwave Week 2002, Milan, Italy, 23-27 Sept 2002,

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Abstract

We report the first mm-wave measurements for lattice-matched InP HEMTS with 70 nm T-gates made using a UVIII/PMMA bilayer resist. The measured DC gate resistance was 340 Ω/mm, while the extrapolated fT of the 70 nm device was ~300 GHz for a 2x50 µm width device.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Professor Iain and Macintyre, Dr Douglas and McLelland, Mrs Helen and Thoms, Dr Stephen and Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled
Authors: Edgar, D. L., Chen, Y., McEwan, F., McLelland, H., Boyd, E., Moran, D., Thoms, S., Macintyre, D., Elgaid, K., Cao, X., Stanley, C., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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