The band gap of ‘‘perfectly disordered’’ Ga0.52In0.48P

DeLong, M. C., Mowbray, D. J., Hogg, R. A., Skolnick, M. S., Williams, J. E., Meehan, K., Kurtz, S. R., Olson, J. M., Wu, M. C. and Hopkinson, M. (1994) The band gap of ‘‘perfectly disordered’’ Ga0.52In0.48P. In: The 12th NREL Photovoltaic Program Review, Denver, CO, USA, 13−15 Oct 1993, pp. 529-537. (doi:10.1063/1.45724)

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Abstract

Because the phenomenon of ordering in Ga0.52In0.48P reduces the optical band gap, the amount of band gap reduction is often taken as an indicator of the extent of ordering. For such an association to be meaningful, the band gap of the ‘‘perfectly disordered’’ material must be known. Values have been reported which vary by as much as 40 meV, whereas the total ordering‐induced band gap reduction measured to date is less than 135 meV. In this paper we report that studies of Ga0.52In0.48P grown by a variety of techniques and, in some cases, subsequently subjected to disordering conditions lead to a value of the low temperature band gap of 2.015±0.007 eV.

Item Type:Conference Proceedings
Additional Information:AIP Conference Proceedings 306:529-537
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: DeLong, M. C., Mowbray, D. J., Hogg, R. A., Skolnick, M. S., Williams, J. E., Meehan, K., Kurtz, S. R., Olson, J. M., Wu, M. C., and Hopkinson, M.
College/School:College of Science and Engineering > School of Engineering
ISSN:0094-243X

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