Fabrication processes for GaAs-based high-power diode lasers

Temkin, H., Meehan, K., Heath, L. S., Williams, J. E., Wang, T. Y., Beyea, D. M., Chin, A. K. and Stutius, W. (1993) Fabrication processes for GaAs-based high-power diode lasers. Proceedings of the SPIE: The International Society for Optical Engineering, 1851, pp. 11-22. (doi:10.1117/12.147595)

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Abstract

GaAs-based, edge-emitting diode lasers have become important light sources for numerous applications, e.g., in ophthalmology and dentistry, pumping of solid-state lasers, and printing on thermal media. The general performance requirements for these devices are high brightness, high reliability, stable optical-characteristics, and low system-cost to performance ratio. Device processing procedures such as dry etching, anodic oxidation, anti-reflection coatings, ion-implantation, and epitaxial growth on non-planar substrates impact the operation of the laser, both positively as well as negatively. The effect of these fabrication procedures on device reliability is discussed where applicable.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Temkin, H., Meehan, K., Heath, L. S., Williams, J. E., Wang, T. Y., Beyea, D. M., Chin, A. K., and Stutius, W.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Proceedings of the SPIE: The International Society for Optical Engineering
Publisher:SPIE - The International Society for Optical Engineering
ISSN:0277-786X
ISSN (Online):1996-756X

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