Major, J. S. et al. (1990) High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering. Journal of Electronic Materials, 19(1), pp. 59-66. (doi: 10.1007/BF02655552)
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Abstract
No abstract available.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
Authors: | Major, J. S., Guido, L. J., Holonyak, N., Hsieh, K. C., Vesely, E. J., Nam, D. W., Hall, D. C., Baker, J. E., Gavrilovic, P., Meehan, K., Stutius, W., and Williams, J. E. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Journal of Electronic Materials |
ISSN: | 0361-5235 |
ISSN (Online): | 1543-186 |
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