High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering

Major, J. S. et al. (1990) High performance AlyGa1−yAs-GaAs-lrxGa1−xAs quantum well lasers defined by silicon-oxygen impurity-induced layer disordering. Journal of Electronic Materials, 19(1), pp. 59-66. (doi: 10.1007/BF02655552)

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Abstract

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Major, J. S., Guido, L. J., Holonyak, N., Hsieh, K. C., Vesely, E. J., Nam, D. W., Hall, D. C., Baker, J. E., Gavrilovic, P., Meehan, K., Stutius, W., and Williams, J. E.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Journal of Electronic Materials
ISSN:0361-5235
ISSN (Online):1543-186

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