High pressure measurements on visible spectrum AlxGa1−xAs heterostructure lasers: 7100–6750-Å 300-K operation

Kirchoefer, S. W., Meehan, K., Holonyak, Jr., N., Gulino, D.A., Drickamer, H.G., Burnham, R.D. and Scifres, D.R. (1982) High pressure measurements on visible spectrum AlxGa1−xAs heterostructure lasers: 7100–6750-Å 300-K operation. Applied Physics Letters, 41(5), p. 406. (doi:10.1063/1.93545)

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Abstract

Pressure applied to high performance cw 300-K bulk-limit (Lz ~600 A) single quantum well heterostructure Alx Gal _ x As (x ~ 0.28, A ~ 7100 A) laser diodes is used to simulate composition change and determine the threshold increase at shorter wavelength. Unless small quantum well sizes are employed in more sophisticated designs it is unlikely that A (for cw 300-K operation) can be made much less than 6900 A.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Kirchoefer, S. W., Meehan, K., Holonyak, Jr., N., Gulino, D.A., Drickamer, H.G., Burnham, R.D., and Scifres, D.R.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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