Impurity-induced disordering of single well AlxGa1−xAs-GaAs quantum well heterostructures

Meehan, K., Brown, J. M., Camras, M. D., Holonyak, N., Burnham, R. D., Paoli, T. L. and Streifer, W. (1984) Impurity-induced disordering of single well AlxGa1−xAs-GaAs quantum well heterostructures. Applied Physics Letters, 44(4), pp. 428-430. (doi:10.1063/1.94798)

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Abstract

Transmission electron microscopy and photoluminescence data are used to show that a s i n g l eGaAsquantum well (L z ≊70 Å) confined by Al x′Ga1−x′As (x′∼0.3) layers can, via low‐temperature (600 °C) Zndiffusion, be interdiffused (‘‘absorbed’’) into the confining layers (impurity‐assisted Al‐Ga interdiffusion) and be shifted to higher gap (x=0→x′∼0.3) without damaging the crystal or ruining its capability to operate as a continuous 300‐K low threshold photopumped laser.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Brown, J. M., Camras, M. D., Holonyak, N., Burnham, R. D., Paoli, T. L., and Streifer, W.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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