Meehan, K., Brown, J. M., Camras, M. D., Holonyak, N., Burnham, R. D., Paoli, T. L. and Streifer, W. (1984) Impurity-induced disordering of single well AlxGa1−xAs-GaAs quantum well heterostructures. Applied Physics Letters, 44(4), pp. 428-430. (doi: 10.1063/1.94798)
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Abstract
Transmission electron microscopy and photoluminescence data are used to show that a s i n g l eGaAsquantum well (L z ≊70 Å) confined by Al x′Ga1−x′As (x′∼0.3) layers can, via low‐temperature (600 °C) Zndiffusion, be interdiffused (‘‘absorbed’’) into the confining layers (impurity‐assisted Al‐Ga interdiffusion) and be shifted to higher gap (x=0→x′∼0.3) without damaging the crystal or ruining its capability to operate as a continuous 300‐K low threshold photopumped laser.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
Authors: | Meehan, K., Brown, J. M., Camras, M. D., Holonyak, N., Burnham, R. D., Paoli, T. L., and Streifer, W. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
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