RF and microwave oscillator design using p-HEMT transistor

Benakaprasad, B., Sharabi, S. and Elgaid, K. (2014) RF and microwave oscillator design using p-HEMT transistor. International Journal of Scientific and Research Publications, 4(8),

Full text not currently available from Enlighten.

Publisher's URL: http://www.ijsrp.org/research-paper-0814.php?rp=P322996

Abstract

This paper presents a systematic approach to designing negative-resistance and Colpitts oscillators using p-HEMT transistor. Various models such as, common source and common gate configuration in negative-resistance oscillators, common source series feedback in Colpitts oscillator is selected to analyze the output power and stability presented by the p-HEMT transistor. These oscillators are designed at 2.45 GHz frequency for which we find application in Bluetooth and Wi-Fi. In this paper, these designs are studied and tested, with their results analyzed below. Further, study proved that the Colpitts oscillator designed gave more output power and stability than the negativeresistance oscillators.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Sharabi, Mr Salah and Elgaid, Dr Khaled and Benakaprasad, Miss Bhavana
Authors: Benakaprasad, B., Sharabi, S., and Elgaid, K.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:International Journal of Scientific and Research Publications
Publisher:IJSRP.ORG
ISSN:2250-3153

University Staff: Request a correction | Enlighten Editors: Update this record