Interdiffusion and Reaction of Pd on Atomically Stepped 6H-SiC Surfaces: Progress Toward Thermally Stable High Temperature Gas Sensors

Stinespring, C. D., Peng, C. Y., Woodworth, A. A., Meehan, K., Murdoch-Kitt, M. J. and Anderson, C. L. (2004) Interdiffusion and Reaction of Pd on Atomically Stepped 6H-SiC Surfaces: Progress Toward Thermally Stable High Temperature Gas Sensors. MRS Proceedings, 828(2004), (doi: 10.1557/proc-828-a7.10)

Abstract

High temperature Pd-SiC Schottky diode gas sensors are known to thermally degrade due to interdiffusion and reaction at the metal-semiconductor interface. To understand and possibly eliminate this problem, detailed surface studies of thermally induced Pd-SiC surface interactions have been performed. These experiments compare standard 6H-SiC (0001) surfaces typical of those used in device fabrication with periodically stepped surfaces prepared by high temperature hydrogen etching. The Pd films range in thickness from the monolayer level (∼0.4 nm) to actual device dimensions (∼46.5 nm) and are deposited under ultrahigh vacuum conditions at ∼50 °C. These films are characterized in-situ using Auger electron spectroscopy both before and after annealing at 670 °C. The Auger lineshapes provide quantitative information on the chemistry of the reaction products. Ex-situ atomic force microscopy is used to characterize changes in surface morphology.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Meehan, Professor Kathleen
• Authors: Stinespring, C. D., Peng, C. Y., Woodworth, A. A., Meehan, K., Murdoch-Kitt, M. J., and Anderson, C. L.
• College/School: College of Science and Engineering > School of Engineering
• Journal Name: MRS Proceedings
• Publisher: Cambridge University Press
• ISSN: 1946-4274
• ISSN (Online): 1946-4274