Automated Parameter Extraction Software for Silicon and High-Voltage Silicon Carbide Power Diodes

Yang, N., Duong, T., Jeong, J.-O., Ortiz, J. M., Hefner, A. and Meehan, K. (2010) Automated Parameter Extraction Software for Silicon and High-Voltage Silicon Carbide Power Diodes. In: Workshop on Control and Modeling for Power Electronics (COMPEL), Boulder, CO USA, 28-30 June 2010, pp. 1-8. ISBN 9781424474622 (doi: 10.1109/compel.2010.5562392)

Abstract

This paper presents an automated parameter extraction software package developed for constructing silicon (Si) and silicon carbide (SiC) power diode models, which is called DIode Model Parameter extrACtion Tools (DIMPACT). This software tool extracts the data necessary to establish a library of power diode component models and provides a method for quantitatively comparing between different types of devices and establishing performance metrics for device development. To verify the accuracy of DIMPACT, the extracted model parameter sets are incorporated into the circuit simulation software to compare model predictions with measured static and transient diode characteristics. In this paper, the DIMPACT parameter extraction results are demonstrated for a 45 V, 15 A Si Schottky diode; a 600 V, 200 A Si PiN diode; a 10 kV, 5 A SiC Junction Barrier Schottky (JBS) diode; and a 10 kV, 20 A SiC PiN diode. The validation results indicate that the model parameters extracted using DIMPACT are accurate.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Meehan, Professor Kathleen
• Authors: Yang, N., Duong, T., Jeong, J.-O., Ortiz, J. M., Hefner, A., and Meehan, K.
• College/School: College of Science and Engineering > School of Engineering
• ISBN: 9781424474622