Gavrilovic, P., Wober, M., Meehan, K. and O'Neill, M.S. (1995) Broadening of the below-threshold near-field profile of GaAs quantum-well lasers due to photon recycling. IEEE Journal of Quantum Electronics, 31(4), pp. 623-626. (doi: 10.1109/3.371934)
Full text not currently available from Enlighten.
Abstract
he subthreshold near-field profile of single quantum well laser diodes was studied experimentally and theoretically. Wide gain-guided stripes as well as single lateral mode ridge-waveguide diodes were investigated. In both types of device, the measured width of the near-field was significantly wider than the width predicted by the conventional theory which includes ambipolar carrier diffusion as the only spatial broadening mechanism. A new model that invokes close to 100% efficient photon recycling was developed to explain the observed near-field profiles.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
| Authors: | Gavrilovic, P., Wober, M., Meehan, K., and O'Neill, M.S. |
| College/School: | College of Science and Engineering > School of Engineering |
| Journal Name: | IEEE Journal of Quantum Electronics |
| Publisher: | IEEE |
| ISSN: | 0018-9197 |
| ISSN (Online): | 1558-1713 |
University Staff: Request a correction | Enlighten Editors: Update this record
Altmetric
Altmetric