Broadening of the below-threshold near-field profile of GaAs quantum-well lasers due to photon recycling

Gavrilovic, P., Wober, M., Meehan, K. and O'Neill, M.S. (1995) Broadening of the below-threshold near-field profile of GaAs quantum-well lasers due to photon recycling. IEEE Journal of Quantum Electronics, 31(4), pp. 623-626. (doi:10.1109/3.371934)

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Abstract

he subthreshold near-field profile of single quantum well laser diodes was studied experimentally and theoretically. Wide gain-guided stripes as well as single lateral mode ridge-waveguide diodes were investigated. In both types of device, the measured width of the near-field was significantly wider than the width predicted by the conventional theory which includes ambipolar carrier diffusion as the only spatial broadening mechanism. A new model that invokes close to 100% efficient photon recycling was developed to explain the observed near-field profiles.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Gavrilovic, P., Wober, M., Meehan, K., and O'Neill, M.S.
College/School:College of Science and Engineering > School of Engineering
Journal Name:IEEE Journal of Quantum Electronics
Publisher:IEEE
ISSN:0018-9197
ISSN (Online):1558-1713

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