Stacking and layer disordering of AlxGa1−xAs-GaAs quantum well heterostructures

Meehan, K., Hsieh, K. C., Costrini, G., Kaliski, R. W., Holonyak, N. and Coleman, J. J. (1986) Stacking and layer disordering of AlxGa1−xAs-GaAs quantum well heterostructures. Applied Physics Letters, 48(13), 861. (doi:10.1063/1.96692)

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Abstract

Data are presented showing that an Al x Ga1−x As‐GaAs quantum wellheterostructure (QWH) or superlattice(SL) can be selectively disordered into higher gap bulk crystal by impurity (Si) diffusion and then have grown epitaxially on it (‘‘stacked’’ on it) another SL (or QWH), which can be subjected to further impurity‐induced layer disordering in a patterned form. The resulting three‐dimensional array can be operated as a photopumped laser.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Hsieh, K. C., Costrini, G., Kaliski, R. W., Holonyak, N., and Coleman, J. J.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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