Implantation disordering of AlxGa1−xAs superlattices

Gavrilovic, P., Deppe, D. G., Meehan, K., Holonyak, N., Coleman, J. J. and Burnham, R. D. (1985) Implantation disordering of AlxGa1−xAs superlattices. Applied Physics Letters, 47(2), 130. (doi:10.1063/1.96238)

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Abstract

Data are presented showing that layer disordering of Al x Ga1 − x As‐GaAs quantum wellheterostructures (QWH’s) or superlattices (SL’s) via ion implantation can be effected with a lattice constituent (Al), an inert ion (Kr), or an active impurity (Zn, Si, S, etc.). A doping impurity that diffuses (during annealing) via multiple sites, making column III sites available for Al‐Ga interchange, is most effective in layer disordering. However, any implanted ion is itself relatively effective in converting an Al x Ga1 − x As‐GaAs QWH or SL to bulk‐crystal Al y Ga1 − y As (0≤y≤x) via damage‐induced disordering.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Gavrilovic, P., Deppe, D. G., Meehan, K., Holonyak, N., Coleman, J. J., and Burnham, R. D.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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