Si-Si pair diffusion and correlation in AlxGa1−xAs and GaAs

Gavrilovic, P., Gavrilovic, J., Meehan, K., Kaliski, R. W., Guido, L. J., Holonyak, N., Hess, K. and Burnham, R. D. (1985) Si-Si pair diffusion and correlation in AlxGa1−xAs and GaAs. Applied Physics Letters, 47(7), 710. (doi:10.1063/1.96067)

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Abstract

The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass spectrometry(SIMS)analysis is used to obtain the Si atom density in the Si‐diffused layers. On the basis of the SIMS data and the observation of a distinct exciton peak in absorption for samples diffused at temperatures ≲775 °C, we argue that in the range n Si≲4×101 8/cm3 the Si impurity diffused into GaAs is correlated and is incorporated as Si‐Si nearest‐neighbor pairs.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Gavrilovic, P., Gavrilovic, J., Meehan, K., Kaliski, R. W., Guido, L. J., Holonyak, N., Hess, K., and Burnham, R. D.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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