Impurity-disordered, coupled-stripe AlxGa1−xAs-GaAs quantum well laser

Gavrilovic, P., Meehan, K., Epler, J. E., Holonyak, N., Burnham, R. D., Thornton, R. L. and Streifer, W. (1985) Impurity-disordered, coupled-stripe AlxGa1−xAs-GaAs quantum well laser. Applied Physics Letters, 46(9), 857. (doi:10.1063/1.95864)

Full text not currently available from Enlighten.

Abstract

Continuous room‐temperature operation of impurity‐disordered, coupled‐stripe Al x Ga1−x As‐GaAs quantum wellheterostructure lasers is described. Silicon (donor) diffusion at 850 °C is used to produce layer disordering and index guiding, in addition to providing carrier confinement in a ten‐stripe coupled array (8‐μm‐wide stripes on 10‐μm centers).

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Gavrilovic, P., Meehan, K., Epler, J. E., Holonyak, N., Burnham, R. D., Thornton, R. L., and Streifer, W.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

University Staff: Request a correction | Enlighten Editors: Update this record