Gavrilovic, P., Meehan, K., Epler, J. E., Holonyak, N., Burnham, R. D., Thornton, R. L. and Streifer, W. (1985) Impurity-disordered, coupled-stripe AlxGa1−xAs-GaAs quantum well laser. Applied Physics Letters, 46(9), 857. (doi: 10.1063/1.95864)
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Abstract
Continuous room‐temperature operation of impurity‐disordered, coupled‐stripe Al x Ga1−x As‐GaAs quantum wellheterostructure lasers is described. Silicon (donor) diffusion at 850 °C is used to produce layer disordering and index guiding, in addition to providing carrier confinement in a ten‐stripe coupled array (8‐μm‐wide stripes on 10‐μm centers).
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
| Authors: | Gavrilovic, P., Meehan, K., Epler, J. E., Holonyak, N., Burnham, R. D., Thornton, R. L., and Streifer, W. |
| College/School: | College of Science and Engineering > School of Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
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