Meehan, K., Gavrilović, P., Holonyak, N., Burnham, R. D. and Thornton, R. L. (1985) Stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering. Applied Physics Letters, 46(1), 75. (doi: 10.1063/1.95859)
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Abstract
The use of Si diffusion and impurity‐induced layer disordering, via a Si3N4 mask pattern, to construct stripe‐geometry Al x Ga1−x As‐GaAs quantum wellheterostructure lasers on n‐type substrates is described. This leads to a convenient form of index‐guided buried‐heterostructure laser that is easily constructed and replicated (in various geometries) on commonly available n‐type GaAs substrate.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
| Authors: | Meehan, K., Gavrilović, P., Holonyak, N., Burnham, R. D., and Thornton, R. L. |
| College/School: | College of Science and Engineering > School of Engineering |
| Journal Name: | Applied Physics Letters |
| Publisher: | American Institute of Physics |
| ISSN: | 0003-6951 |
| ISSN (Online): | 1077-3118 |
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