Stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering

Meehan, K., Gavrilović, P., Holonyak, N., Burnham, R. D. and Thornton, R. L. (1985) Stripe-geometry AlxGa1−xAs-GaAs quantum well heterostructure lasers defined by Si diffusion and disordering. Applied Physics Letters, 46(1), 75. (doi:10.1063/1.95859)

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Abstract

The use of Si diffusion and impurity‐induced layer disordering, via a Si3N4 mask pattern, to construct stripe‐geometry Al x Ga1−x As‐GaAs quantum wellheterostructure lasers on n‐type substrates is described. This leads to a convenient form of index‐guided buried‐heterostructure laser that is easily constructed and replicated (in various geometries) on commonly available n‐type GaAs substrate.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Gavrilović, P., Holonyak, N., Burnham, R. D., and Thornton, R. L.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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