Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusion

Meehan, K., Holonyak, N., Brown, J. M., Nixon, M. A., Gavrilovic, P. and Burnham, R. D. (1984) Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusion. Applied Physics Letters, 45(5), 549. (doi:10.1063/1.95318)

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Abstract

The Si impurity is diffused (850 °C, 10 h, x j ∼2.4 μm) into 2.4 μm of Al x Ga1−x As‐GaAs (x≳0.6) superlattice (barrier L B ≊320 Å, quantum wellL z ≊280 Å) and disorders it into bulk‐crystal Al x′Ga1‐x′As (x′≳0.32). The as‐grown infrared gap superlattice is converted selectively to red gap bulk crystal and, where undiffused and not disordered, is still capable of continuous 300‐K photopumped laser operation at a threshold of 4×103 W/cm2 (or J eq ∼1.7×103 A/cm2, 5145 Å pump photon).

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Holonyak, N., Brown, J. M., Nixon, M. A., Gavrilovic, P., and Burnham, R. D.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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