Meehan, K., Holonyak, N., Brown, J. M., Nixon, M. A., Gavrilovic, P. and Burnham, R. D. (1984) Disorder of an AlxGa1−xAs-GaAs superlattice by donor diffusion. Applied Physics Letters, 45(5), 549. (doi: 10.1063/1.95318)
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Abstract
The Si impurity is diffused (850 °C, 10 h, x j ∼2.4 μm) into 2.4 μm of Al x Ga1−x As‐GaAs (x≳0.6) superlattice (barrier L B ≊320 Å, quantum wellL z ≊280 Å) and disorders it into bulk‐crystal Al x′Ga1‐x′As (x′≳0.32). The as‐grown infrared gap superlattice is converted selectively to red gap bulk crystal and, where undiffused and not disordered, is still capable of continuous 300‐K photopumped laser operation at a threshold of 4×103 W/cm2 (or J eq ∼1.7×103 A/cm2, 5145 Å pump photon).
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
Authors: | Meehan, K., Holonyak, N., Brown, J. M., Nixon, M. A., Gavrilovic, P., and Burnham, R. D. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
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