Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering

Meehan, K., Brown, J. M., Holonyak, N., Burnham, R. D., Paoli, T. L. and Streifer, W. (1984) Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disordering. Applied Physics Letters, 44(7), 700. (doi:10.1063/1.94883)

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Abstract

Stripe‐geometry AlGaAs‐GaAs single quantum‐well heterostructure lasers are demonstrated in which the region complementary to the stripe (outside of and defining the stripe) is shifted to higher band gap, and lower refractive index, by low‐temperature (600 °C) Zndiffusion. Impurity‐induced Al‐Ga interdiffusion causes the single GaAsquantum well (x=0, L z ≊80 Å) outside of the stripe region to be mixed (‘‘absorbed,’’ x→x′) into the Al x′Ga1−x′As (x′∼0.3, L z′≊0.18 μm) bulk‐layer waveguide of the crystal.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Brown, J. M., Holonyak, N., Burnham, R. D., Paoli, T. L., and Streifer, W.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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