Thermal-anneal wavelength modification of multiple-well p-n AlxGa1−x As-GaAs quantum-well lasers

Meehan, K., Brown, J. M., Gavrilovic, P., Holonyak, N., Burnham, R. D., Paoli, T. L. and Streifer, W. (1984) Thermal-anneal wavelength modification of multiple-well p-n AlxGa1−x As-GaAs quantum-well lasers. Journal of Applied Physics, 55(7), 2672. (doi:10.1063/1.333277)

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Abstract

Data are presented showing that ordinary thermal annealing can be used to modify GaAs square wells into rounded Al x Ga1−x As quantum wells and shift the continuous 300‐K laser operation of a p‐n multiple‐well Al x Ga1−x As–GaAs heterostructure laser to higher energy. Transmission electron microscopy is used to show that thermal annealing at 900 °C for 10‐h changes, for example, well sizes from 85 to 105 Å and coupling barriers from 95 to 75 Å, which results in a change of laser photon energy of Δℏω∼50 meV. Bandfilling is minimal in multiple quantum‐well lasers, thus making thermal annealing a useful method to ‘‘tune’’ a continuous 300‐K quantum‐well laser to shorter wavelength as shown here. These thermal annealing experiments indicate that the Al‐Ga interdiffusion coefficient at a heterointerface is D(900)∼10− 1 8 cm2/s.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Brown, J. M., Gavrilovic, P., Holonyak, N., Burnham, R. D., Paoli, T. L., and Streifer, W.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550

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