Transient capacitance spectroscopy on large quantum well heterostructures

Martin, P. A., Meehan, K., Gavrilovic, P., Hess, K., Holonyak, N. and Coleman, J. J. (1983) Transient capacitance spectroscopy on large quantum well heterostructures. Journal of Applied Physics, 54(8), 4689. (doi:10.1063/1.332633)

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Abstract

We report transient capacitancemeasurements on Al x Ga1−x As–GaAs–Al x Ga1 −x As (x∼0.35) double heterojunctions with a large quantum well active region (L z ∼800 Å). It is suggested that the thin GaAs layer acts as a ‘‘giant’’ artificial deep level. It follows then that the band edge discontinuity ΔE c determines the electron emission rates (from the thin layer), thus making it possible for ΔE c to be determined by transient capacitancemeasurements.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Martin, P. A., Meehan, K., Gavrilovic, P., Hess, K., Holonyak, N., and Coleman, J. J.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550

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