Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum-well heterostructure laser diodes by thermal annealing

Meehan, K., Holonyak, N., Burnham, R. D., Paoli, T. L. and Streifer, W. (1983) Wavelength modification (Δℏω=10–40 meV) of room temperature continuous quantum-well heterostructure laser diodes by thermal annealing. Journal of Applied Physics, 54(12), 7190. (doi:10.1063/1.331957)

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Abstract

Data are presented showing that wavelength modification, of at least 210 Å (from 8180 to 7970 Å), of broad area room temperature pulsed quantum wellheterostructure (QWH) laser diodes is possible by thermal annealing. Thermal annealing at 900 °C for 8 h results in only a minor change in the threshold current density, 385–425 A/cm2, thus making possible similar wavelength modification (8180–8080 Å) of c o n t i n u o u s (cw) 300 K stripe‐geometry QWH laser diodes.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Meehan, K., Holonyak, N., Burnham, R. D., Paoli, T. L., and Streifer, W.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Journal of Applied Physics
Publisher:American Institute of Physics
ISSN:0021-8979
ISSN (Online):1089-7550

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