Richard, T. A., Kish, F. A., Holonyak, N., Dallesasse, J. M., Hsieh, K. C., Ries, M. J., Gavrilovic, P., Meehan, K. and Williams, J. E. (1991) Native-oxide coupled-stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers. Applied Physics Letters, 58(21), 2390. (doi: 10.1063/1.104880)
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Abstract
Data are presented on a high‐performance native‐oxide coupled‐stripe Al y Ga1−y As‐GaAs‐In x Ga1−x As quantum wellheterostructure laser realized by the recently introduced simple process of ‘‘wet’’ oxidation (H2O vapor+N2,≳400 °C, 3 h) of the upper Al y Ga1−y As confining layer. If the native oxide between active stripes (ten 5 μm stripes on 10 μm centers) is brought into closer proximity with the waveguide and quantum well region (i.e., from 0.53 to 0.4 μm), the 10‐stripe laser operates decoupled because of increased (coupling) absorption losses and some index guiding.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Meehan, Professor Kathleen |
Authors: | Richard, T. A., Kish, F. A., Holonyak, N., Dallesasse, J. M., Hsieh, K. C., Ries, M. J., Gavrilovic, P., Meehan, K., and Williams, J. E. |
College/School: | College of Science and Engineering > School of Engineering |
Journal Name: | Applied Physics Letters |
Publisher: | American Institute of Physics |
ISSN: | 0003-6951 |
ISSN (Online): | 1077-3118 |
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