Native-oxide coupled-stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers

Richard, T. A., Kish, F. A., Holonyak, N., Dallesasse, J. M., Hsieh, K. C., Ries, M. J., Gavrilovic, P., Meehan, K. and Williams, J. E. (1991) Native-oxide coupled-stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers. Applied Physics Letters, 58(21), 2390. (doi: 10.1063/1.104880)

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Abstract

Data are presented on a high‐performance native‐oxide coupled‐stripe Al y Ga1−y As‐GaAs‐In x Ga1−x As quantum wellheterostructure laser realized by the recently introduced simple process of ‘‘wet’’ oxidation (H2O vapor+N2,≳400 °C, 3 h) of the upper Al y Ga1−y As confining layer. If the native oxide between active stripes (ten 5 μm stripes on 10 μm centers) is brought into closer proximity with the waveguide and quantum well region (i.e., from 0.53 to 0.4 μm), the 10‐stripe laser operates decoupled because of increased (coupling) absorption losses and some index guiding.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Richard, T. A., Kish, F. A., Holonyak, N., Dallesasse, J. M., Hsieh, K. C., Ries, M. J., Gavrilovic, P., Meehan, K., and Williams, J. E.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
Publisher:American Institute of Physics
ISSN:0003-6951
ISSN (Online):1077-3118

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