High-power disorder-defined coupled stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers

Major, J. S., Hall, D. C., Guido, L. J., Holonyak, N., Gavrilovic, P., Meehan, K., Williams, J. E. and Stutius, W. (1989) High-power disorder-defined coupled stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers. Applied Physics Letters, 55(3), p. 271. (doi:10.1063/1.101926)

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Abstract

Data are presented describing continuous (cw) room‐temperature laser operation of Al y Ga1 − y As‐GaAs‐In x Ga1 − x As quantum wellheterostructure (QWH) phase‐locked arrays. The ten‐stripe arrays have 3 μm emitters, with emitter to emitter spacing of 4 μm, and are patterned onto the QWH crystal using a self‐aligned Si‐O impurity‐induced layer disordering (IILD) procedure. The IILD process is devised to provide limited layer intermixing to ensure optical coupling (across ∼1 μm). The coupled stripe QWH lasers exhibit narrow twin‐lobed far‐field patterns that show unambiguously phase locking in the highest order supermode. The cw output power of the lasers (differential quantum efficiency 52%) is shown from threshold (∼75 mA) to over 280 mW (both facets, no optical coatings).

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Meehan, Professor Kathleen
Authors: Major, J. S., Hall, D. C., Guido, L. J., Holonyak, N., Gavrilovic, P., Meehan, K., Williams, J. E., and Stutius, W.
College/School:College of Science and Engineering > School of Engineering
Journal Name:Applied Physics Letters
ISSN:0003-6951
ISSN (Online):1077-3118

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